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Physics — 2025, Undergraduate
This study analysed the characteristics of semiconductor diodes and transistor configurations. Current-voltage curves for diodes were recorded, and input-output characteristics of common transistor configurations were examined at selected bias points. The findings revealed typical forward and reverse diode behaviour with knee voltages, while transistor characteristics showed expected active-region behaviour with current gain consistent with data-sheet values. The study observed temperature drift in characteristics. It recommends controlled biasing and temperature stabilisation in device characterisation.
For reference and learning only. Do not submit this work as your own.
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